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Product Detailed Parameters
- Description：IGBT PT MOS 7 COMBI 1200 V 75 A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT75GP120JSC30 is a single-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Microchip Technology. It utilizes Silicon Carbide (SiC) technology and features the ISOTOP package configuration with SOT-227-4 housing. The device supports screw mounting and operates within a junction temperature range of -55°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 1.2 kV, a continuous collector current of 128 A at 25°C, and a power dissipation rating of 543 W. The gate-emitter maximum voltage is rated at 20 V, with a leakage current of 100 nA.
Feature Summary
- Integrates Silicon Carbide semiconductor technology for high-performance switching applications.
- Features the ISOTOP form factor designed for efficient thermal management via baseplate mounting.
- Provides single-chip configuration suitable for high-voltage power conversion circuits.
Applications
- High-frequency industrial motor drives
- Uninterruptible power supply (UPS) systems
- Induction heating equipment
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions adhere to manufacturer guidelines to maintain device integrity. Validate that the SOT-227-4 package dimensions match the target PCB or heatsink design requirements before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability combined with low on-state losses typical of SiC devices. The 1.2 kV rating suits medium-voltage AC/DC conversion topologies. Evaluate thermal resistance characteristics against the expected ambient operating conditions. Consider the 128 A current capacity relative to the system's peak load demands and derating factors specified in the official technical documentation.
Part Context
This part belongs to the Microchip IGBT module portfolio, specifically utilizing advanced SiC materials to enhance efficiency compared to traditional silicon alternatives. The ISOTOP series is engineered for robust mechanical stability and superior heat transfer capabilities in demanding power electronics environments.
Replacement Considerations
Consult official Microchip cross-reference documentation for verified equivalent parts. Ensure any substitute maintains identical pinout compatibility, voltage ratings, and thermal performance metrics to guarantee seamless circuit integration without redesign.
