APT80GA60B

$7.53

Description：IGBT PT 600V 143A TO247
Series：-

SKU:180dc674a8b4 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 143A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：143 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 47A
Power - Max：625 W
Switching Energy：840µJ (on), 751µJ (off)
Input Type：Standard
Gate Charge：230 nC
Td (on/off) @ 25°C：23ns/158ns
Test Condition：400V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT80GA60B

Overview

The APT80GA60B is a single IGBT from the Power MOS 8™ family, utilizing Punch-Through technology. It features a collector-emitter breakdown voltage of 600 V and a typical saturation voltage of 2 V at 25°C. The device supports a continuous collector current of 80 A at 25°C and 40 A at 110°C. It is housed in a TO-247 package and is rated for operation up to a maximum junction temperature of 150°C.

Feature Summary

Power MOS 8™ Punch-Through architecture optimized for high efficiency
Designed for hard switching applications with low switching losses
Capable of stable parallel operation

Applications

High-frequency power conversion systems
Switch mode power supplies (SMPS)
Induction heating equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official Microchip Technology documentation before integration. Confirm that the TO-247 pinout matches the target PCB footprint and thermal management design requirements.

Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling. Ensure the gate drive circuitry accommodates the Power MOS 8™ switching profile and that the thermal solution maintains the junction temperature within the specified 150°C limit under worst-case operating conditions.

Part Context

This part belongs to the Power MOS 8™ IGBT series, which represents an evolution in punch-through technology designed to balance conduction loss and switching speed. It serves as a discrete alternative to co-packaged modules for medium-power applications where system-level flexibility is prioritized.