APT80GA90LD40

$11.30

Description：IGBT PT 900V 145A TO-264
Series：POWER MOS 8™

SKU:2a3a562dec77 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 900V 145A TO-264
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：145 A
Current - Collector Pulsed (Icm)：239 A
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 47A
Power - Max：625 W
Switching Energy：1652µJ (on), 1389µJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：18ns/149ns
Test Condition：600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：25 ns
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264
Grade：-
Qualification：-

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APT80GA90LD40

Overview

The APT80GA90LD40 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes PT MOS 8 Combi technology and features a TO-247-3 through-hole package. The device has a maximum collector-emitter voltage of 900 V and a continuous collector current of 145 A at 25°C. The saturation voltage is specified as 2.5 V, with a maximum power dissipation of 625 W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Single IGBT configuration utilizing PT MOS 8 Combi technology for optimized switching performance.

Applications

Industrial motor drives
Power supply units
Inverter circuits

Procurement Notes

Verify the specific suffix LD40 against the official Microchip datasheet to confirm pinout and electrical characteristics match the design requirements. Ensure the TO-247-3 package dimensions are compatible with the intended PCB layout and thermal management solution before finalizing procurement.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 900 V and substantial current handling up to 145 A. Consider the 2.5 V saturation voltage for conduction loss calculations and ensure the thermal design can dissipate up to 625 W under appropriate cooling conditions.

Part Context

This part belongs to the Microchip IGBT transistor family, specifically leveraging the PT MOS 8 Combi technology platform. It is designed for general-purpose high-power switching applications where robustness and efficiency are critical. The TO-247-3 package provides a standard form factor for through-hole mounting in industrial electronics.

Replacement Considerations

Consult the official Microchip replacement guide or datasheet revision history for confirmed equivalent parts. Do not assume cross-compatibility with other manufacturers' 900 V IGBTs without verifying pinouts, saturation voltages, and thermal resistance parameters.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.