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Product Detailed Parameters
- Description：IGBT 600V 151A 462W SOT227
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 80A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：ISOTOP®
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：151 A
- Power - Max：462 W
- Current - Collector Cutoff (Max)：1.25 mA
- Input Capacitance (Cies) @ Vce：9.84 nF @ 25 V
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Overview
The APT80GP60JDQ3 is a single Insulated Gate Bipolar Transistor (IGBT) module manufactured by Microchip Technology. It utilizes PT Power MOS 7 technology and is housed in an ISOTOP-4 package for surface mount installation. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 151 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 462 W. The maximum gate-emitter voltage is specified at 30 V, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates PT Power MOS 7 technology for optimized switching performance.
- Features an ISOTOP-4 surface mount package designed for efficient thermal management.
- Provides high current handling capability suitable for demanding power applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Switched-mode power supplies
Procurement Notes
Verify the specific ordering suffix DQ3 against official Microchip documentation to confirm pinout compatibility and internal circuit configuration. Ensure that the ISOTOP-4 footprint matches the target PCB design. Confirm RoHS compliance status through the latest datasheet or environmental declaration before finalizing procurement specifications.
Selection Notes
Select this component when a single IGBT with 600 V blocking capability and high current capacity is required in a surface-mount form factor. Compare the 151 A continuous current rating and 462 W power dissipation against system thermal constraints. Verify that the 30 V maximum gate-emitter voltage aligns with the available drive circuitry capabilities.
Part Context
This part belongs to the APT80GP60 series of single IGBT modules. It shares core electrical characteristics with variants like APT80GP60J but differs in packaging and specific internal configurations indicated by the suffix. The ISOTOP-4 package distinguishes it from through-hole alternatives such as the TO-247 MAX versions within the same product family.
Replacement Considerations
Direct substitutes may include other APT80GP60 variants with compatible pinouts. Verify equivalent voltage, current, and thermal ratings before substitution. Cross-reference datasheets for any differences in switching times or gate charge requirements.
