APTC90H12T2G

$75.65

Description：MOSFET 4N-CH 900V 30A SP2
Series：CoolMOS™

SKU:a858eb20b2e3 Category: FET, MOSFET Arrays Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 900V 30A SP2
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tray
Technology：MOSFET (Metal Oxide)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：900V
Current - Continuous Drain (Id) @ 25°C：30A
Rds On (Max) @ Id, Vgs：120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：6800pF @ 100V
Power - Max：250W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP2
Supplier Device Package：SP2
Grade：-
Qualification：-

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APTC90H12T2G

Overview

The APTC90H12T2G is a Full-Bridge Super Junction MOSFET Power Module featuring CoolMOS™ technology. It provides a drain-source breakdown voltage of 900 V and a maximum on-resistance of 120 mΩ at 25°C. The module supports a continuous drain current of 30 A at 25°C case temperature, with a pulsed current rating of 75 A. It includes an internal NTC thermistor for temperature monitoring and offers high isolation voltage. Designed for rugged operation, it features avalanche energy ratings and low stray inductance.

Feature Summary

Integrates CoolMOS™ Super Junction technology for ultra-low on-resistance and gate charge
Includes an internal NTC thermistor for precise junction temperature monitoring
Features very low stray inductance and high-level integration within an isolated package
Rated for repetitive and non-repetitive avalanche energy to enhance operational ruggedness

Applications

Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control systems

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that all specified pin groups are shorted together as required by the datasheet. Ensure thermal management solutions account for the specified junction-to-case resistance. Validate that the application environment remains within the absolute maximum ratings for voltage, current, and temperature limits.

Selection Notes

Select this module for applications requiring high-frequency operation and direct heatsink mounting. Consider the 4000 V RMS isolation voltage for safety-critical designs. Evaluate the thermal impedance curves for duty cycle requirements. The integrated thermistor simplifies protection circuitry design compared to discrete sensing methods.

Part Context

This component belongs to Microsemi Corporation's CoolMOS™ power module family. It utilizes Super Junction technology originally developed by Infineon Technologies AG. The device is packaged as a full-bridge configuration, integrating multiple switching elements into a single isolated unit to reduce system complexity and parasitic inductance.