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The APTCV40H60CT1G is a silicon IGBT module manufactured by Microchip Technology. It features a single configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device has a collector-emitter saturation voltage of 1.9 V and a power dissipation rating of 176 W. It operates within a junction temperature range of -40°C to +175°C. The module utilizes the SP3-32 package style and employs screw mount installation. Key electrical limits include a gate-emitter voltage of ±20 V and a leakage current of 250 µA.
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the component meets all required RoHS compliance standards for the target market. Ensure that the SP3-32 package dimensions align with the mechanical design constraints of the intended heat sink and mounting assembly before finalizing procurement.
Select this component when a single-switch topology is required with 600 V blocking capability and up to 80 A continuous current handling. The SP3-32 package offers a balance between current capacity and physical footprint for board-level or chassis-mount designs. Consider the 1.9 V saturation voltage for conduction loss calculations in efficiency-critical applications requiring moderate switching frequencies.
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. These modules are designed for general-purpose power switching, offering improved ruggedness and lower switching losses compared to older planar technologies. The series supports various configurations including single, half-bridge, and full-bridge topologies across different voltage ratings.
Direct replacements may include other Microchip APTGT series modules with identical SP3-32 packaging and similar electrical ratings, such as the APTGT50H60T3G, provided the higher current rating does not necessitate layout changes. Verify pinout compatibility and thermal interface requirements before substituting.