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Product Detailed Parameters
- Description：IGBT MODULE 600V 80A 176W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT, Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：176 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTCV50H60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Maximum power dissipation is rated at 176 W, with an operating temperature range from -40°C to +100°C. The unit weighs 136.750 g and utilizes screw mount installation.
Feature Summary
- Integrated full bridge topology for compact power conversion designs
- Trench field-stop technology for optimized switching performance
- Robust thermal management capabilities within specified operating limits
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter systems
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.
Selection Notes
Select this module for applications requiring a 600 V rating and 80 A continuous current capacity. The SP3-32 package suits screw-mount implementations where moderate power density is required. Evaluate thermal resistance parameters against heatsink capabilities to ensure junction temperatures remain within the +100°C maximum limit under load.
Part Context
This component belongs to the APTGT/APTCV series of silicon IGBT modules from Microchip Technology. It shares the SP3-32 footprint with variants like APTGT50H60T3G but may differ in internal chip specifications or packaging suffixes. The series targets general-purpose industrial power electronics requiring reliable switching characteristics.
Replacement Considerations
Direct substitutes include APTGT50H60T3G if electrical parameters match specific design requirements. Verify pinout compatibility and thermal interface dimensions before swapping. Alternative packages such as SP1-12 offer different form factors but require circuit board redesign.
