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Product Detailed Parameters
- Description：IGBT MODULE 1200V 80A 280W SP3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter - IGBT, FET
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：280 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：2.77 nF @ 25 V
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Overview
The APTCV90TL12T3G is a high-voltage IGBT module manufactured by Microsemi Corporation. It features a 1200V collector-emitter voltage rating and an 80A continuous current capacity. The device is housed in an SP3 chassis-mount package, designed for robust thermal management with a maximum power dissipation of 280W at case temperature. This component utilizes Trench Field Stop technology to optimize switching performance and conduction losses.
Feature Summary
- Utilizes Trench Field Stop IGBT technology for enhanced efficiency
- Designed specifically for three-level inverter topologies
- SP3 chassis mount package ensures reliable thermal dissipation
Applications
- Three-level inverter systems
- High-power industrial motor drives
- Uninterruptible power supply (UPS) units
Procurement Notes
Verify the obsolete status of this part number before procurement planning. Confirm compatibility with existing cooling infrastructure due to the SP3 chassis mount requirement. Ensure that replacement strategies account for potential lead time extensions or alternative sourcing from authorized distributors given the end-of-life designation.
Selection Notes
Select this module for applications requiring high voltage isolation and efficient switching in three-level configurations. The SP3 package dictates specific mechanical integration requirements. Evaluate thermal resistance parameters against system heat sink capabilities to ensure operation within the specified junction temperature range during peak load conditions.
Part Context
This component belongs to Microsemi's high-voltage power discrete and module portfolio. It represents the evolution of IGBT technology focusing on reduced switching losses. The SP3 packaging standard provides a common mechanical footprint for various current ratings within the same product family, facilitating modular design approaches in power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. As the product is listed as obsolete, direct replacements may require functional equivalence analysis with newer generations of IGBT modules from the manufacturer or other vendors.
