APTDF200A120D16AG

APTDF200A120D16AG

$83.38
  • Description:DIODE MODULE GEN PURP 1200V 410A
  • Series:-

SKU:823d5898123a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE MODULE GEN PURP 1200V 410A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):410A
  • Voltage - Forward (Vf) (Max) @ If:3.5 V @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):385 ns
  • Current - Reverse Leakage @ Vr:200 µA @ 1200 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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APTDF200A120D16AG

Overview

The APTDF200A120D16AG is a 1200V, 200A fast diode phase-leg power module. It features an isolated package with M6 power connectors and an Aluminum Nitride (AlN) substrate for improved thermal performance. The device supports a maximum DC forward current of 410A at 25°C case temperature and operates within a junction temperature range of -40°C to 175°C. Key electrical parameters include a peak repetitive reverse voltage of 1200V, a typical forward voltage of 2.4V at 200A, and a junction-to-case thermal resistance of 0.135 °C/W.

Feature Summary

  • Fast-recovery times with soft-recovery characteristics
  • High-blocking voltage and high current capability
  • Low-leakage current and low-noise switching
  • Direct mounting to heatsink via isolated package

Applications

  • Uninterruptible Power Supply (UPS)
  • Induction heating
  • Welding equipment
  • High-speed rectifiers

Procurement Notes

Verify the specific part number against official Microchip Technology documentation to ensure accuracy. Confirm that the component meets RoHS compliance requirements. Ensure proper electrostatic discharge handling procedures are followed during installation. Check datasheet specifications for torque values and thermal interface material compatibility before procurement.

Selection Notes

Select this module for applications requiring high-frequency operation and low losses. Consider the AlN substrate for superior thermal management in compact designs. Evaluate the isolation voltage rating against system requirements. Assess the thermal resistance and operating temperature range to ensure reliable performance under expected load conditions.

Part Context

This component belongs to Microchip's fast diode phase-leg power module series. It is designed for high-power conversion systems where efficiency and reliability are critical. The module integrates multiple diode chips into a single package to simplify design and reduce system size.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' modules without detailed parameter comparison.

FAQ

What is the recommended junction temperature range under switching conditions?

The recommended junction temperature range under switching conditions is from -40°C to TJmax - 25°C.

How does the Aluminum Nitride substrate benefit the module?

The Aluminum Nitride substrate provides improved thermal performance compared to standard substrates.

What is the RMS isolation voltage rating?

The RMS isolation voltage between any terminal and the case is 4000V for 1 minute at 50/60Hz.

APTDF200A120D16AGAPTDF200A120D16AG
$83.38
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