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APTDF300A120D16AG
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Product Detailed Parameters
- Description：DIODE MODULE GEN PURP 1200V 600A
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：600A
- Voltage - Forward (Vf) (Max) @ If：3.5 V @ 300 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：385 ns
- Current - Reverse Leakage @ Vr：300 µA @ 1200 V
- Operating Temperature - Junction：-40°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APTDF300A120D16AG is a 1200V, 300A fast diode phase-leg power module. It features an isolated package with M6 power connectors and an Aluminum Nitride (AlN) substrate for improved thermal performance. The device supports a maximum junction temperature of 175°C and offers low leakage current and soft-recovery characteristics. Key electrical ratings include a peak repetitive reverse voltage of 1200V, a DC forward current of 600A at 25°C case temperature, and a non-repetitive forward surge current of 1500A.
Feature Summary
- Soft-recovery characteristics for low-noise switching
- Aluminum Nitride (AlN) substrate for improved thermal performance
- Direct mounting to heatsink via isolated package design
Applications
- Uninterruptible Power Supply (UPS)
- Induction heating
- Welding equipment
- High-speed rectifiers
Procurement Notes
Verify the specific datasheet revision DS00005302A when sourcing components. Confirm that the ordering suffix AG corresponds to RoHS compliance as indicated in official documentation. Ensure proper electrostatic discharge handling procedures are followed during installation due to component sensitivity.
Selection Notes
Select this module for high-frequency applications requiring outstanding performance and low losses. The AlN substrate provides low junction-to-case thermal resistance suitable for demanding thermal environments. Verify that the required isolation voltage meets the 4000V RMS specification between terminals and the case.
Part Context
This component belongs to Microchip Technology's family of fast diode phase-leg power modules. It utilizes silicon technology designed for robust operation under high-current conditions. The module integrates two diodes within a single housing to facilitate efficient circuit layout and thermal management.
Replacement Considerations
Consult official Microchip documentation for confirmed substitute part numbers. Do not assume functional equivalence with other series without verifying pinout and electrical specifications against the primary datasheet.
FAQ
What is the recommended junction temperature range under switching conditions?
The recommended operating junction temperature range under switching conditions is from -40°C up to TJmax minus 25°C.
How does the device handle thermal stress?
It uses an Aluminum Nitride (AlN) substrate to provide improved thermal performance and low junction-to-case thermal resistance.
What is the maximum isolation voltage rating?
The RMS isolation voltage from any terminal to the case is rated at 4000V for one minute at 50/60Hz.
