APTGF25H120T1G

Overview

The APTGF25H120T1G is a full-bridge NPT IGBT power module with a 1200 V collector-emitter breakdown voltage. It supports a continuous collector current of 40 A at 25°C and 25 A at 80°C, with a maximum power dissipation of 208 W. The device features a collector-emitter saturation voltage of 3.7 V max at 25°C and 4.0 V max at 125°C. It operates within a junction temperature range of -40°C to 150°C and utilizes an SP1 package.

Feature Summary

• Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current for high-frequency operation up to 50 kHz.
• Integrated soft recovery parallel diodes characterized by low forward voltage and low leakage current.
• Symmetrical design ensuring very low stray inductance and the ability to easily parallel legs for increased current capability.
• Internal NTC thermistor included for precise temperature monitoring.

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm that the specific unit matches the SP1 package outline and includes the internal NTC thermistor as documented. Ensure handling procedures account for electrostatic discharge sensitivity during installation.

Selection Notes

Select this module for applications requiring a full-bridge configuration with isolated mounting capabilities. Evaluate thermal management requirements based on the 0.6 °C/W junction-to-case thermal resistance. Verify that the gate drive circuitry can support the specified 15 V operating voltage and manage the total gate charge of 160 nC effectively.

Part Context

This component belongs to the Microsemi NPT IGBT power module family designed for robust high-power switching. It integrates both IGBTs and anti-parallel diodes into a single isolated package, facilitating compact phase leg designs in medium-power electronic systems.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, ensure the replacement maintains the 1200 V rating, SP1 footprint, and compatible electrical characteristics such as saturation voltage and switching energy losses.

FAQ

What is the maximum operating frequency supported by this module?

The module supports switching frequencies up to 50 kHz due to its NPT Fast IGBT technology and low tail current characteristics.

How does the module handle temperature monitoring?

It includes an integrated NTC thermistor for temperature monitoring, allowing for direct tracking of the internal thermal state.

What is the isolation voltage rating of the package?

The RMS isolation voltage from any terminal to the case is rated at 4000 V for one minute at 50/60 Hz.