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The APTGF300U120DG is a single-switch NPT IGBT power module with an integrated series diode, manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 400 A at Tc = 25°C, decreasing to 300 A at Tc = 80°C. The maximum power dissipation is 1780 W at Tc = 25°C. The device utilizes an SP6 isolated package designed for direct heatsink mounting. Electrical characteristics include a typical collector-emitter saturation voltage of 3.9 V at 300 A and a gate-emitter threshold voltage ranging from 4.5 V to 6.5 V.
Verify the specific revision level against the latest official datasheet before procurement. Confirm that the SP6 package dimensions and mounting torque specifications align with the mechanical constraints of the target application. Ensure electrostatic discharge handling procedures are strictly followed during assembly due to component sensitivity.
Select this module for applications requiring high switching frequencies and rugged performance. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the positive temperature coefficient of VCEsat when designing parallel configurations to ensure stable current sharing across multiple units.
This component belongs to the Microsemi NPT IGBT Power Module family. It integrates a single switch with series diodes in an isolated package. The product line emphasizes high-frequency capabilities and low profile designs suitable for demanding industrial power electronics environments.
No public confirmed substitute part numbers are available in the source documentation.