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The APTGF50DDA120T3G is a dual boost chopper NPT IGBT power module manufactured by Microsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 70 A at Tc = 25°C, decreasing to 50 A at Tc = 80°C. The pulsed collector current reaches 150 A at Tc = 25°C. The maximum power dissipation is 312 W at Tc = 25°C. The gate-emitter voltage limit is ±20 V. The module utilizes an SP3 package with screw mounting and includes an internal NTC thermistor for temperature monitoring.
Verify the specific revision level against the official datasheet before procurement. Confirm that the SP3 package dimensions and terminal pinout match the target PCB layout. Ensure the thermal interface material selection aligns with the specified junction-to-case thermal resistance values for the intended operating case temperature range.
Select this component for applications requiring high-frequency operation up to 50 kHz. Evaluate the positive temperature coefficient of VCEsat when designing parallel leg configurations to ensure balanced current sharing. Verify that the short-circuit withstand capability meets the protection requirements of the driving circuitry under fault conditions.
This part belongs to the APTGF series of NPT IGBT modules from Microsemi. It is specifically configured as a dual boost chopper topology within the SP3 isolated package family. The series emphasizes high integration levels and direct heatsink mounting capabilities for efficient thermal management in power electronics designs.
Consult official Microsemi documentation for confirmed substitute part numbers. Do not assume functional equivalence with other manufacturers' modules without verifying electrical parameters, pinouts, and thermal characteristics.