APTGF50DDA120T3G

APTGF50DDA120T3G

$30.63
  • Description:IGBT MODULE 1200V 70A 312W SP3
  • Series:-

SKU:fa7b75db728d Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 70A 312W SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Dual Boost Chopper
  • Vce(on) (Max) @ Vge, Ic:3.7V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):70 A
  • Power - Max:312 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:3.45 nF @ 25 V

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APTGF50DDA120T3G

Overview

The APTGF50DDA120T3G is a dual boost chopper NPT IGBT power module manufactured by Microsemi. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 70 A at Tc = 25°C, decreasing to 50 A at Tc = 80°C. The pulsed collector current reaches 150 A at Tc = 25°C. The maximum power dissipation is 312 W at Tc = 25°C. The gate-emitter voltage limit is ±20 V. The module utilizes an SP3 package with screw mounting and includes an internal NTC thermistor for temperature monitoring.

Feature Summary

  • Non Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
  • Soft recovery parallel diodes with low forward voltage and leakage current
  • Kelvin emitter configuration designed for easy drive circuit integration
  • Internal NTC thermistor integrated for precise junction temperature monitoring

Applications

  • AC and DC motor control systems
  • Switched Mode Power Supplies (SMPS)
  • Dual Boost chopper circuits

Procurement Notes

Verify the specific revision level against the official datasheet before procurement. Confirm that the SP3 package dimensions and terminal pinout match the target PCB layout. Ensure the thermal interface material selection aligns with the specified junction-to-case thermal resistance values for the intended operating case temperature range.

Selection Notes

Select this component for applications requiring high-frequency operation up to 50 kHz. Evaluate the positive temperature coefficient of VCEsat when designing parallel leg configurations to ensure balanced current sharing. Verify that the short-circuit withstand capability meets the protection requirements of the driving circuitry under fault conditions.

Part Context

This part belongs to the APTGF series of NPT IGBT modules from Microsemi. It is specifically configured as a dual boost chopper topology within the SP3 isolated package family. The series emphasizes high integration levels and direct heatsink mounting capabilities for efficient thermal management in power electronics designs.

Replacement Considerations

Consult official Microsemi documentation for confirmed substitute part numbers. Do not assume functional equivalence with other manufacturers' modules without verifying electrical parameters, pinouts, and thermal characteristics.

APTGF50DDA120T3GAPTGF50DDA120T3G
$30.63
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