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Product Detailed Parameters
- Description：IGBT MODULE 600V 65A 250W SP4
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.2 nF @ 25 V
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Overview
The APTGF50DH60TG is a 600 V asymmetrical bridge IGBT power module manufactured by Microsemi Corporation. It features NPT (Non-Punch Through) technology and is housed in an SP4 base-mounted package. The device supports a continuous collector current of 65 A at 25 °C, with a maximum collector-emitter voltage of 600 V. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V and a maximum power dissipation of 250 W. The module operates within a junction temperature range of -40 °C to +150 °C.
Feature Summary
- Asymmetrical bridge configuration utilizing NPT IGBT technology for robust performance
- Integrated NTC thermistor for precise thermal monitoring
- Base-mounted design compatible with standard industrial cooling solutions
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter systems
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to discontinuation status. Confirm RoHS compliance and specific packaging details prior to acquisition. Cross-reference datasheet revisions to ensure compatibility with existing designs. Request original documentation to validate technical specifications against current requirements.
Selection Notes
Evaluate the 65 A continuous current rating and 600 V blocking capability against system load requirements. Consider the SP4 package dimensions for mechanical integration and thermal management strategies. Assess the 2.1 V saturation voltage impact on overall efficiency. Ensure gate drive characteristics align with the specified input capacitance and leakage currents.
Part Context
This component belongs to the Microsemi APTGF series of NPT IGBT modules. It represents a legacy product line from Microsemi Corporation, now part of Microchip Technology. The module was designed for high-reliability power conversion applications requiring stable switching characteristics and thermal stability.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Consult official Microchip Technology documentation for current equivalent recommendations or updated series replacements.
