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The APTGF90A60T1G is a Non Punch Through (NPT) IGBT power module manufactured by Microchip Technology. It features a phase leg configuration with an integrated anti-parallel diode in an isolated SP1 package. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 90 A at Tc = 80°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 2.5 V at 90 A, and a maximum power dissipation of 416 W at Tc = 25°C. The junction-to-case thermal resistance is 0.3 °C/W for the IGBT and 0.65 °C/W for the diode. Operating temperatures range from -40°C to +150°C for the junction.
Verify component authenticity through authorized Microchip distributors or certified supply chain partners. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your production timeline. Ensure proper electrostatic discharge handling procedures are followed during receipt and storage, as specified in application note APT0502.
Select this module for applications requiring high-frequency operation up to 100 kHz. Evaluate thermal management requirements based on the 0.3 °C/W junction-to-case resistance. Ensure the drive circuit can handle the specified 15V gate voltage and that the heatsink mounting torque adheres to the M4 specification of 2 to 3 N.m for reliable isolation.
This component belongs to the Thunderbolt IGBT E2 series from Microchip Technology. It utilizes the SP1 isolated package format, designed for direct mounting to heatsinks. The product line emphasizes ruggedness with rated Reverse Bias Safe Operating Area (RBSOA) and Short Circuit Safe Operating Area (SCSOA).
Consult official Microchip documentation for verified cross-reference part numbers. Ensure any substitute maintains the SP1 package outline and equivalent electrical ratings for 600V/90A applications.