APTGF90DA60CT1G

$60.14

Description：IGBT MODULE 600V 110A 416W SP1
Series：-

SKU:69181ba2e667 Category: IGBT Modules Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 600V 110A 416W SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk
IGBT Type：NPT
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：SP1
Supplier Device Package：SP1
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：110 A
Power - Max：416 W
Current - Collector Cutoff (Max)：250 µA
Input Capacitance (Cies) @ Vce：4.3 nF @ 25 V

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APTGF90DA60CT1G

Overview

The APTGF90DA60CT1G is a single-phase leg Insulated Gate Bipolar Transistor (IGBT) power module manufactured by Microsemi Corporation. It utilizes Non-Punch Through (NPT) technology and features an integrated Silicon Carbide (SiC) chopper diode. The device is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 90 A. It is housed in the SP1-12 package, designed for screw mount installation, with a maximum power dissipation of 385 W.

Feature Summary

Integrates NPT IGBT with SiC chopper diode for high-speed switching performance
Single phase leg configuration simplifies circuit design
SP1-12 flange mount package ensures robust thermal management

Applications

Boost chopper circuits
Industrial motor drives
Power supply systems

Procurement Notes

Verify component authenticity through authorized Microsemi distributors. Confirm package integrity and pin alignment against SP1-12 specifications. Check datasheet revisions for any parameter updates. Ensure storage conditions meet moisture sensitivity level requirements. Validate compatibility with existing gate drive voltages before integration.

Selection Notes

Select this module for applications requiring high voltage blocking capability and fast recovery characteristics provided by the SiC diode. Consider the 1200 V rating for medium-voltage industrial environments. Evaluate thermal resistance requirements against the 385 W dissipation limit. Compare against other NPT modules if higher current density is needed.

Part Context

This component belongs to the Microsemi APTGF series of high-power IGBT modules. The series is characterized by NPT silicon technology and diverse packaging options like SP1 and SP6. These modules are engineered for demanding power electronics applications where reliability and switching speed are critical factors.

Replacement Considerations

Direct substitutes include APTGF90DA60P or APTGF90DA60CT1G variants with compatible pinouts. Verify electrical parameters such as Vceo and Ic match system requirements. Ensure thermal interface material compatibility with the SP1-12 base plate.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.