APTGF90DH60T3G

APTGF90DH60T3G

$31.16
  • Description:IGBT MODULE 600V 110A 416W SP3
  • Series:-

SKU:c7280099fa10 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 110A 416W SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Asymmetrical Bridge
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):110 A
  • Power - Max:416 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:4.3 nF @ 25 V

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APTGF90DH60T3G

Overview

The APTGF90DH60T3G is a Non Punch Through (NPT) IGBT power module manufactured by Microsemi Corporation. It features an asymmetrical bridge configuration with a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 110 A at Tc = 25°C. The device incorporates fast IGBT technology with low voltage drop and soft recovery parallel diodes, supporting switching frequencies up to 100 kHz. Electrical characteristics include a maximum collector-emitter saturation voltage of 2.5 V at 100 A and a gate-emitter threshold voltage ranging from 4.5 V to 6.5 V. The module utilizes an SP3 package with screw mounting and includes an internal NTC thermistor for temperature monitoring.

Feature Summary

  • Non Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
  • Soft recovery parallel diodes designed for low forward voltage and low leakage current
  • Kelvin emitter connection integrated for simplified drive circuit implementation
  • Internal NTC thermistor included for precise junction temperature monitoring

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Switched Reluctance Motor Drives

Procurement Notes

Verify the specific revision status and RoHS compliance details directly with the manufacturer or authorized distributors before procurement. Confirm that the SP3 package dimensions and mounting torque specifications align with the intended heatsink interface. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive semiconductor components.

Selection Notes

Select this component for applications requiring high-frequency operation up to 100 kHz with robust short-circuit withstand capability. The symmetrical design and positive temperature coefficient of VCEsat facilitate easy paralleling for higher current requirements. Consider the thermal resistance values and isolation voltage ratings when designing the cooling system and ensuring electrical safety in the final assembly.

Part Context

This part belongs to the Microsemi APTGF series of asymmetric bridge IGBT power modules. These modules are engineered for industrial power conversion applications where high reliability and efficient switching performance are critical. The SP3 packaging provides a compact form factor suitable for direct mounting to heatsinks, offering low profile and effective thermal management solutions for demanding power electronics designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits and thermal interfaces if considering alternative models from the same product family or different manufacturers.

APTGF90DH60T3GAPTGF90DH60T3G
$31.16
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