APTGFQ25H120T2G

Overview

The APTGFQ25H120T2G is a full-bridge NPT IGBT power module manufactured by Microsemi Corporation. It features a 1200 V collector-emitter breakdown voltage and supports a continuous collector current of 25 A at an operating case temperature of 80°C, with a pulsed current rating of 50 A. The device incorporates fieldstop IGBT technology to achieve low voltage drop and short tail current characteristics. Electrical specifications include a maximum saturation voltage of 2.3 V at 125°C and a gate threshold voltage ranging from 3 V to 7 V. The module integrates soft recovery parallel diodes with a forward voltage of 2.6 V at 25 A and includes an internal NTC thermistor for temperature monitoring.

Feature Summary

• Fieldstop IGBT technology providing low voltage drop and short tail current
• Soft recovery parallel diodes designed for low forward voltage and leakage current
• Internal NTC thermistor integrated for precise temperature monitoring
• Very low stray inductance design optimized for high-frequency operation

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control systems

Procurement Notes

Verify the component status as this specific part number may be discontinued or subject to limited availability. Confirm that the ordering suffix corresponds exactly to the required package and thermal characteristics. Ensure compliance with RoHS standards and validate the isolation voltage requirements against the application's electrical safety needs before finalizing procurement.

Selection Notes

Select this module for applications requiring a full-bridge configuration with high-frequency switching capabilities up to 50 kHz. Consider the junction-to-case thermal resistance of 0.55 °C/W for the IGBT when designing the heatsink interface. Verify that the gate drive circuitry can accommodate the specified gate threshold voltage range and that the PCB layout minimizes stray inductance to leverage the module's low-inductance design benefits.

Part Context

This component belongs to the Microsemi APTGF series of full-bridge IGBT modules. It utilizes Non-Punch Through (NPT) technology combined with Fieldstop architecture to balance blocking voltage capability with switching performance. The SP1-style flange mount package allows for direct mounting to isolated heatsinks, facilitating efficient thermal management in compact power electronic designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative full-bridge IGBT modules with matching 1200 V ratings and similar current capacities only after verifying pin compatibility and thermal interface dimensions.