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The APTGLQ100H65T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3F screw-mount package. It features a quad configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 250 W. Operating within a temperature range of -40°C to +125°C, it includes a gate-emitter leakage current of 240 nA and a maximum gate-emitter voltage of 20 V.
Verify the specific suffix T3G against official Microchip documentation to confirm RoHS compliance and lead-free status. Confirm that the SP3F package dimensions match your thermal interface requirements. Ensure ordering quantities align with distributor minimums, as factory packaging may vary. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Select this component when a quad IGBT topology is required within a 650 V system. The SP3F package offers a balance between current handling and physical footprint. Evaluate thermal management needs based on the 250 W power dissipation limit. Compare the 1.65 V saturation voltage against alternative modules to optimize efficiency for the specific load profile and switching frequency constraints.
This module belongs to the APTGLQ series, which utilizes IGBT4 technology for enhanced performance. The series provides various configurations including dual and quad options across different voltage ratings. The SP3F package is designed for high-reliability industrial applications requiring efficient heat transfer and secure mounting.
Direct replacements must match the quad configuration, 650 V rating, and SP3F package. Verify pinout compatibility and thermal characteristics. Consult Microchip's official substitution guide for validated alternatives within the APTGLQ family.