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The APTGLQ30H65T3G is a silicon-based IGBT module manufactured by Microchip Technology, utilizing Trench Field Stop technology. It features a full bridge configuration housed in an SP3F package with screw mount installation. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 30 A at 80°C case temperature. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, gate-emitter leakage current of 300 nA, and power dissipation of 95 W. Operating temperatures range from -40°C to +125°C.
Verify the specific suffix T3G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Ensure the SP3F package dimensions match your mechanical constraints. Confirm that the 650V rating and 30A current capacity align with your circuit requirements before ordering.
Select this component when a compact full bridge topology is required for medium-power applications. The SP3F package offers a balance between current handling and board space. Consider the 1.85V saturation voltage for efficiency calculations and verify thermal resistance values for heatsink design within the specified temperature range.
This part belongs to Microchip's APTGLQ series of IGBT modules. These modules are designed for general-purpose power switching applications. The series utilizes advanced trench field stop technology to improve switching characteristics compared to older planar technologies, offering better trade-offs between conduction loss and switching speed.
Cross-reference with other Microchip SP3F full bridge modules such as APTGTQ series variants if higher current ratings are needed. Verify pinout compatibility and thermal interface specifications when substituting with similar packages from other manufacturers.