APTGLQ400A120T6G

Overview

The APTGLQ400A120T6G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP6C package. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 350 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 1.02 kW. Operating within a temperature range of -40°C to +125°C, it utilizes screw mount installation. Key electrical parameters include a gate-emitter leakage current of 200 nA and a maximum gate-emitter voltage of ±20 V.

Feature Summary

• Half-bridge topology for efficient power switching
• SP6C package design for robust mechanical mounting
• Silicon-based trench field-stop technology

Applications

• Industrial motor drives
• Uninterruptible power supplies
• High-frequency inverters

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the SP6C package dimensions align with the target heatsink interface. Ensure thermal management systems support the specified 1.02 kW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a 1.2 kV half-bridge configuration is required. The 350 A current rating suits medium-power applications. Verify compatibility with standard gate drive voltages of ±15 V to ±20 V. Consider the SP6C footprint for PCB or chassis layout constraints.

Part Context

This module belongs to the APTGLQ series of high-voltage IGBTs from Microchip Technology. It shares the SP6C form factor with other devices in the lineup, facilitating standardized mechanical integration across different current and voltage ratings within industrial power electronics designs.

Replacement Considerations

Direct substitutes include the APTGX300A120T6G and APTGT400DU120G, which share the SP6C package and 1.2 kV rating. Verify current handling capabilities and saturation voltage differences before substitution.