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The APTGLQ40HR120CT3G is a trench field-stop IGBT module manufactured by Microchip Technology. It features a dual common emitter configuration within an SP3F screw-mount package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a saturated collector-emitter voltage of 2.05 V, a power dissipation rating of 250 W, and a gate-emitter leakage current of 240 nA. The module operates within a junction temperature range of -40°C to +100°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific suffix 'CT3G' against official Microchip documentation to confirm RoHS compliance and lead-free status. Ensure the SP3F package footprint matches the target PCB layout. Confirm that the operating temperature range aligns with the system's thermal requirements before finalizing procurement orders.
Select this component when a 1200 V, 75 A IGBT solution with integrated thermal sensing is required. The SP3F package offers a compact form factor suitable for space-constrained designs. Consider the 2.05 V saturation voltage for efficiency calculations in moderate-power applications requiring reliable thermal feedback via the built-in NTC sensor.
This part belongs to the APTGLQ series of IGBT modules from Microchip Technology. The series utilizes trench field-stop technology to enhance switching characteristics compared to standard planar devices. The SP3F packaging provides a standardized interface for industrial power electronics, facilitating integration into existing modular systems designed for similar voltage and current ratings.
Direct replacements must match the 1200 V rating, 75 A current capacity, and SP3F package dimensions. Verify pinout compatibility and thermal resistance values. Consult Microchip's official substitution guide for qualified alternatives within the APTGLQ family or equivalent products from other manufacturers.