APTGLQ50H65T1G

APTGLQ50H65T1G

$52.10
  • Description:IGBT MODULE 650V 70A 175W SP1
  • Series:-

SKU:56654f811909 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 650V 70A 175W SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Full Bridge
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):70 A
  • Power - Max:175 W
  • Current - Collector Cutoff (Max):50 µA
  • Input Capacitance (Cies) @ Vce:3.1 nF @ 25 V

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APTGLQ50H65T1G

Overview

The APTGLQ50H65T1G is a full bridge IGBT module utilizing Trench + Field Stop IGBT4 technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C. The saturation voltage is specified as 2.3 V at 15 V gate drive and 50 A collector current. Maximum power dissipation is 175 W, with an input capacitance of 3.1 nF at 25 V. The junction temperature range spans from -40°C to 175°C. It employs screw mount installation within the SP1 module package.

Feature Summary

  • Integrates Trench + Field Stop IGBT4 technology for high-speed switching performance.
  • Includes an integrated NTC thermistor for thermal monitoring.
  • Configured as a full bridge topology for power conversion applications.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-frequency inverters

Procurement Notes

Verify the specific ordering suffix against official Microchip Technology documentation to confirm exact electrical characteristics and packaging details. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure component authenticity and traceability before procurement.

Selection Notes

Select this component based on its 650 V blocking capability and 70 A current rating. Ensure the application requires the SP1 package form factor and screw mounting style. Verify that the thermal management system supports the 175 W power dissipation limit and the 175°C maximum junction temperature specification.

Part Context

This device belongs to the APTGLQ series of high-speed IGBT modules manufactured by Microchip Technology. The series utilizes advanced trench field-stop technology to optimize switching losses and conduction voltage. The SP1 package provides a standardized footprint for industrial power electronics designs requiring robust isolation and thermal performance.

Replacement Considerations

Consult official Microchip cross-reference guides for verified substitutes. Potential alternatives include other APTGLQ series variants with adjusted current ratings or different package configurations, provided they match the 650 V voltage class and full bridge topology requirements.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Does the module include thermal sensing?

Yes, it includes an integrated NTC thermistor for thermal monitoring.

What is the gate-emitter voltage specification?

The datasheet specifies a saturation voltage test condition of 15 V gate drive; standard IGBT modules typically operate within a ±20 V gate-emitter voltage range.

APTGLQ50H65T1GAPTGLQ50H65T1G
$52.10
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