SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGLQ50H65T1G is a full bridge IGBT module utilizing Trench + Field Stop IGBT4 technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 70 A at 25°C. The saturation voltage is specified as 2.3 V at 15 V gate drive and 50 A collector current. Maximum power dissipation is 175 W, with an input capacitance of 3.1 nF at 25 V. The junction temperature range spans from -40°C to 175°C. It employs screw mount installation within the SP1 module package.
Verify the specific ordering suffix against official Microchip Technology documentation to confirm exact electrical characteristics and packaging details. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure component authenticity and traceability before procurement.
Select this component based on its 650 V blocking capability and 70 A current rating. Ensure the application requires the SP1 package form factor and screw mounting style. Verify that the thermal management system supports the 175 W power dissipation limit and the 175°C maximum junction temperature specification.
This device belongs to the APTGLQ series of high-speed IGBT modules manufactured by Microchip Technology. The series utilizes advanced trench field-stop technology to optimize switching losses and conduction voltage. The SP1 package provides a standardized footprint for industrial power electronics designs requiring robust isolation and thermal performance.
Consult official Microchip cross-reference guides for verified substitutes. Potential alternatives include other APTGLQ series variants with adjusted current ratings or different package configurations, provided they match the 650 V voltage class and full bridge topology requirements.
The maximum operating junction temperature is 175°C.
Yes, it includes an integrated NTC thermistor for thermal monitoring.
The datasheet specifies a saturation voltage test condition of 15 V gate drive; standard IGBT modules typically operate within a ±20 V gate-emitter voltage range.