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The APTGLQ80HR120CT3G is a dual common emitter IGBT module manufactured by Microchip Technology. It utilizes silicon technology and features a SP3F package designed for screw mount installation. The device supports a collector-emitter maximum voltage of 1.2 kV with a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V, a gate-emitter leakage current of 600 nA, and a power dissipation rating of 500 W. The component operates within a temperature range of -40°C to +100°C and has a maximum gate-emitter voltage of 20 V.
Verify the specific suffix CT3G against official datasheets to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for the SP3F form factor. Cross-reference RoHS compliance status directly with manufacturer documentation prior to integration into regulated equipment designs.
Select this component when a dual common emitter topology is required for 1.2 kV applications. The 150 A current rating suits moderate to high-power industrial loads. Evaluate the 500 W power dissipation capability against system cooling constraints. Confirm that the SP3F footprint aligns with the printed circuit board layout and mechanical assembly guidelines provided in the official package drawing.
This module belongs to the APTGLQ series of high-speed IGBT modules from Microchip Technology. These devices are engineered for efficiency in switching applications. The SP3F package represents a standardized form factor within the company's discrete semiconductor portfolio, facilitating consistent thermal management strategies across similar product lines.
Direct substitutes require matching the 1.2 kV voltage rating, 150 A current capacity, and SP3F package dimensions. Verify pinout compatibility and saturation voltage characteristics to ensure equivalent circuit performance without redesigning the driver or heatsink infrastructure.