SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT100A602G is a Trench Field Stop IGBT module in a Half Bridge configuration. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The saturation voltage is 1.5 V, with a power dissipation rating of 340 W. Operating temperature ranges from -40°C to +100°C. The device utilizes silicon technology and is housed in an SP2 through-hole package.
Verify the specific suffix '2' against official Microchip documentation to confirm pinout and thermal characteristics differ from similar variants like APTGT100A60T1G. Ensure compatibility with required gate drive voltages and mounting hardware specifications before integration.
Select this component for high-current applications requiring robust switching performance. Consider the 150 A continuous current rating and 600 V blocking capability when designing circuits. Evaluate thermal management requirements based on the 340 W power dissipation limit and operating temperature range.
This part belongs to the Microsemi (now Microchip) APTGT series of Trench Field Stop IGBT modules. These components are designed for medium-power industrial applications, offering improved switching characteristics compared to standard planar technologies while maintaining ruggedness in harsh electrical environments.
Public confirmed substitute part numbers: None identified.