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The APTGT100H120G is a silicon IGBT module from Microchip Technology, housed in an SP6 chassis mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 140 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 480 W. It operates within a temperature range of -40°C to +100°C, utilizing Trench Field Stop technology for efficient switching performance.
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with existing system designs. Confirm that the SP6 package dimensions align with the intended heatsink interface. Check for any recent product change notifications regarding material composition or testing standards before finalizing procurement specifications.
Select this component when a high-voltage full bridge configuration is required for medium-power industrial applications. The 1.2 kV rating suits standard grid-connected systems. Ensure the thermal solution can handle the 480 W dissipation limit while maintaining junction temperatures within the specified operational range under peak load conditions.
This part belongs to Microchip's high-speed IGBT4 series, designed for efficiency in power conversion. The SP6 package is a standardized form factor used across various voltage ratings within the family, allowing for modular design approaches in inverter architectures requiring robust semiconductor switching capabilities.
Cross-reference with other SP6 packaged full bridge modules from the same manufacturer for direct pin-compatible alternatives. Verify electrical parameters such as saturation voltage and switching times against the original design requirements to ensure functional equivalence.