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The Microchip Technology APTGT150DH120G is a Trench Field Stop IGBT module in the SP6 package. It features an asymmetrical bridge configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 220 A at 25°C. The device has a saturated collector-emitter voltage of 1.7 V, a power dissipation rating of 690 W, and operates within a temperature range of -40°C to +100°C.
Verify the specific datasheet revision and technical parameters directly from the manufacturer's official documentation before integration. Confirm that the SP6 package dimensions and thermal characteristics align with the target heatsink design. Ensure gate drive requirements match the specified voltage limits to prevent device damage during operation.
Select this component for applications requiring robust 1200 V blocking capability and high current handling up to 220 A. The asymmetrical design suits circuits where reverse voltage blocking is not required. Evaluate thermal management needs based on the 690 W dissipation rating and ensure adequate cooling for the SP6 package form factor.
This part belongs to the Microchip PowerTrench series of IGBT modules. It is engineered for efficiency in power conversion systems. The SP6 packaging provides a standardized footprint for easy replacement and integration into existing industrial power electronics architectures.