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The APTGT150DH60TG is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP4 package. It features a dual configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 220 A at 25°C. The saturation voltage is specified at 1.7 V, while the gate-emitter leakage current is limited to 400 nA. Power dissipation reaches 690 W, and the unit supports screw mounting within an operating temperature range of -40°C to +125°C.
Verify the specific suffix against official Microchip documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notifications before integration into regulated designs.
Select this component when a 600V rating and 220A continuous current capacity are required in a compact SP4 footprint. Ensure the application design accommodates the 690W power dissipation limit and utilizes appropriate heatsinking for the specified temperature range.
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. These components are designed for high-efficiency power conversion, offering improved switching characteristics compared to previous generation technologies within the same voltage class.
Direct substitutes include the APTGT150A120TG, which shares the SP4 package but operates at 1200V. Verify pin compatibility and thermal requirements when considering alternative voltage ratings within the same package family.