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The Microchip Technology APTGT150SK120G is a single IGBT power module utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 220 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 690 W, with an operating temperature range from -40°C to +100°C. The module employs screw mount installation within the SP6 package and supports a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official datasheets prior to integration. Ensure storage conditions align with manufacturer specifications to maintain device integrity during handling and assembly processes.
Select this module for applications requiring 1.2 kV blocking capability and 220 A continuous current handling. Evaluate thermal management requirements against the 690 W power dissipation rating. Confirm mechanical compatibility with the SP6 package dimensions and screw mounting specifications for the target design.
This component belongs to the Microchip Power Modules series, specifically the PM-IGBT-TFS-SP6C family. It represents a discrete single-switch solution within the broader portfolio of silicon IGBT modules offered by the manufacturer for medium-to-high power electronic systems.
Consult official substitution guides for compatible alternatives. Verify electrical parameters and package compatibility before considering cross-references.