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The APTGT150TL60G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 200 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 480 W, with an operating temperature range from -40°C to +100°C. The component is housed in an SP6 package, designed for screw mount installation, and has a unit weight of 110 g.
Verify the specific datasheet revision and any Product Change Notifications (PCN) issued by Microchip Technology prior to procurement. Confirm that the SP6 package dimensions and terminal configurations match the target PCB or busbar design requirements. Ensure thermal interface materials are compatible with the module's base plate specifications for optimal heat dissipation performance.
Select this component when a single IGBT with 600 V blocking capability and 200 A continuous current rating is required. The SP6 package offers a compact form factor suitable for applications where space is limited but high current handling is necessary. Consider the 1.5 V saturation voltage for efficiency calculations in low-voltage, high-current circuits.
This part belongs to the Microchip Technology PM-IGBT-TFS-SP6C series, which provides various voltage and current ratings within the same SP6 package footprint. This simplifies board layout and mechanical design across different product variants. The series supports scalable power solutions for industrial applications requiring reliable silicon IGBT performance.
Direct replacements include other parts within the PM-IGBT-TFS-SP6C series such as APTGT150SK60G or APTGT150DA60G, provided electrical parameters like VCEO and ICC meet the application requirements. Verify pinout compatibility and thermal characteristics before substitution.