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The BSM100GB170DN2HOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It integrates an N-channel Insulated Gate Bipolar Transistor with a fast free-wheeling diode in a package featuring an insulated metal base plate. The device supports a collector-emitter voltage of 1700 V and a continuous DC collector current of 145 A at a case temperature of 80 °C, or 100 A at 25 °C. Maximum ratings include a pulsed collector current of 290 A at 80 °C and a maximum junction temperature of 150 °C. The module includes a minimum gate resistance specification of 15 Ohms.
Verify the specific ordering code C67070-A2703-A67 against the datasheet to confirm component authenticity. Ensure that the procurement documentation matches the manufacturer's specifications for the BSM 100 GB 170 DN2 series. Confirm compliance with the safety warnings regarding aviation or life-support applications as outlined in the official product data sheet.
Select this module based on the required 1700 V blocking voltage and the thermal management capabilities needed for a 145 A continuous current rating. Consider the switching characteristics defined at 1200 V bus voltage and the specified gate resistance values. Evaluate the safe operating area curves to ensure the application stays within the limits for pulsed currents and duty cycles.
This component belongs to the BSM series originally developed by Siemens and later maintained under EUPEC standards before becoming part of Infineon Technologies. The naming convention reflects the historical lineage of the product line. The module represents a standard solution for medium-power industrial applications requiring robust half-bridge configurations.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs if considering alternative modules from the same manufacturer family.