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Product Detailed Parameters
- Description：IGBT MODULE 1200V 300A 1040W D3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：1040 W
- Current - Collector Cutoff (Max)：6 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The APTGT200A120D3G is a silicon-based IGBT module manufactured by Microchip Technology. It features a dual configuration housed in a D3-11 package with screw mount installation style. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 440 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 1.45 kW. The unit operates within a temperature range of -40°C to +125°C and accepts a maximum gate-emitter voltage of 20 V.
Feature Summary
- Dual IGBT configuration for bridge or push-pull circuit topologies
- Trench field-stop technology for optimized switching performance
- Screw mount design for secure mechanical attachment to heatsinks
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency induction heating systems
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration. Ensure the procurement channel provides valid traceability records for quality assurance purposes.
Selection Notes
Select this component when a dual IGBT topology is required with high current handling capabilities. The 1.2 kV rating suits medium-voltage applications. Evaluate the D3-11 package dimensions against available board space and verify that the cooling system can manage the 1.45 kW power dissipation under worst-case operating conditions.
Part Context
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. The series utilizes advanced silicon planar technology to deliver robust performance in power conversion applications. The D3-11 package is a standard form factor designed for efficient thermal transfer and reliable mounting in industrial power electronics assemblies.
Replacement Considerations
Direct substitutes must match the 1.2 kV voltage rating, 440 A current capacity, and D3-11 package footprint. Verify equivalent saturation voltage and switching times to ensure circuit compatibility without redesigning the gate drive network.
