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The APTGT200A170D3G is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a D3-11 package designed for screw mount installation. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 400 A at 25°C. The saturation voltage is specified at 2 V, with a power dissipation rating of 1.47 kW. Operating conditions range from -40°C to +125°C, and the gate-emitter maximum voltage is 20 V.
Verify the specific datasheet revision and electrical characteristics directly from Microchip Technology before integration. Confirm that the D3-11 package dimensions and mounting requirements align with the target design specifications. Ensure compliance with RoHS directives as indicated in official documentation.
Select this component when a dual IGBT configuration with 1.7 kV blocking voltage and 400 A current capacity is required. Consider the D3-11 package size and screw-mount style for mechanical compatibility. Evaluate the 1.47 kW power dissipation against the available cooling infrastructure to ensure reliable operation within the specified temperature range.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. These modules are engineered for high-power switching applications requiring robust performance and reliability. The D3-11 packaging provides a standardized form factor for easy integration into various power electronic systems.
Consult Microchip Technology for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameters before considering any alternative components.