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The APTGT200DA120D3G is a silicon-based IGBT module manufactured by Microchip Technology, housed in the D3-11 package. It features a single configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 300 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 1.05 kW, with an operating temperature range from -40°C to +125°C. The module utilizes screw mount installation and supports a maximum gate-emitter voltage of ±20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package degradation during handling and assembly processes.
Select this module for applications requiring 1.2 kV blocking voltage and 300 A continuous current capacity. The D3-11 package suits designs utilizing screw-mount thermal management strategies. Evaluate thermal resistance requirements against the 1.05 kW dissipation rating to ensure adequate heatsinking for sustained operation within the specified temperature range.
This component belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. The series provides optimized switching characteristics and low conduction losses for medium-power industrial converters. The D3-11 packaging standardizes mounting interfaces across various current ratings within the product family.
Direct replacements require matching the D3-11 package, 1.2 kV rating, and similar current capabilities. Verify pinout compatibility and thermal interface specifications before substitution.