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The APTGT200DA120G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP6C package. It features a single configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 280 A at 25°C. The saturation voltage is rated at 1.7 V, while power dissipation reaches 890 W. Operating temperatures range from -40°C to +100°C, with a maximum gate-emitter voltage of 20 V. The component utilizes screw mount installation and weighs approximately 110 g.
Verify the specific suffix G against official Microchip documentation to confirm exact manufacturing revisions and compliance status. Confirm package integrity upon receipt, as screw-mount modules require precise handling to maintain thermal interface quality. Cross-reference the Mouser part number 494-APTGT200DA120G with the manufacturer datasheet to ensure alignment with current production specifications before finalizing procurement orders.
Select this module when a single high-current switch is required within the SP6 form factor. Ensure the application voltage does not exceed 1.2 kV and that thermal management can handle 890 W dissipation. Compare against the APTGT200DU120G if a dual common source configuration is preferred instead of a single unit. Verify that the operating temperature range up to 100°C meets the system's environmental constraints.
This component belongs to the PM-IGBT-TFS-SP6C series from Microchip Technology. It shares the SP6C package footprint with other variants like the APTGT200SK120G but differs in internal configuration and current ratings. The series is designed for general-purpose industrial power switching applications requiring reliable performance in compact spaces.
The APTGT200DU120G offers a dual common source configuration in the same SP6C package. The APTGT200SK120G provides similar electrical characteristics but may differ in specific thermal or switching parameters. Verify pin compatibility and thermal resistance values before substituting.