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Product Detailed Parameters
- Description：IGBT MODULE 1200V 280A 890W SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：280 A
- Power - Max：890 W
- Current - Collector Cutoff (Max)：350 µA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The Microchip Technology APTGT200DH120G is a high-performance IGBT module utilizing Trench Field Stop technology. It features an asymmetrical bridge configuration with a collector-emitter breakdown voltage of 1200 V and a saturation voltage of 1.7 V. The module supports a continuous collector current of 280 A at case temperatures up to 80°C, with a maximum power dissipation of 890 W. It is housed in an SP6 package designed for chassis mounting.
Feature Summary
- Incorporates Trench Field Stop technology for enhanced switching performance and efficiency.
- Asymmetrical bridge configuration optimized for specific power conversion topologies.
- SP6 package design facilitates robust thermal management and secure chassis mounting.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency induction heating
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against official Microchip documentation prior to integration. Confirm that the SP6 package dimensions and mounting requirements align with the target mechanical design. Ensure thermal interface materials are compatible with the specified operating temperature range and power dissipation limits.
Selection Notes
Select this component for applications requiring high voltage isolation and efficient power handling in compact form factors. The Trench Field Stop technology offers advantages in switching speed compared to standard planar devices. Consider the 1200 V rating for systems operating with significant voltage transients or higher DC bus voltages.
Part Context
This module belongs to the APTGT series of IGBT modules from Microchip Technology. It is part of a family of power semiconductor devices designed for demanding industrial and commercial applications. The series emphasizes reliability and performance through advanced silicon technologies and robust packaging solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using official Microchip compatibility guides or by consulting authorized distributors for equivalent specifications.
