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The APTGT200DU120G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6 package. It features a dual common source configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 280 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 890 W. Gate-emitter leakage current is specified at 500 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and the unit weighs 110 g.
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the SP6 package dimensions and terminal configurations match the target heatsink interface requirements. Ensure compliance with RoHS directives as indicated in official documentation. Cross-reference the part number with authorized distributors to confirm current availability status and lead times.
Select this component when a dual IGBT configuration is required within the SP6 form factor. Evaluate the 1.2 kV voltage rating against system bus voltages to ensure adequate safety margins. Consider the 280 A continuous current capability relative to thermal management solutions. Verify that the screw mount mounting style aligns with the mechanical design constraints of the final assembly.
This module belongs to the APTGT series of trench field-stop IGBTs from Microchip Technology. The series utilizes silicon technology optimized for high-power switching applications. The SP6 package provides a standardized footprint for integration into various power electronic systems requiring robust performance and reliable operation under demanding electrical conditions.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal characteristics before replacing.