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The APTGT200DU60TG is a Trench Field Stop (TFS) IGBT module manufactured by Microchip Technology. It features a dual common source configuration housed in an SP4 package, designed for chassis mounting. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 290 A at 25°C. Key electrical parameters include a saturation voltage of 1.7 V, power dissipation of 625 W, and a gate-emitter leakage current of 500 nA. Operating temperatures range from -40°C to +100°C.
Verify the specific suffix 'TG' against official Microchip documentation to confirm compliance with RoHS directives and halogen-free requirements. Confirm that the SP4 package dimensions match the target thermal management infrastructure. Ensure the gate drive circuitry accommodates the specified 20 V maximum rating and 500 nA leakage characteristics for reliable operation.
Select this component when a 600 V rated IGBT module is required for high-current applications up to 290 A. The dual common source topology is suitable for standard half-bridge topologies. Consider the 625 W power dissipation capability relative to the available cooling solution. Verify that the chassis mount style aligns with the mechanical constraints of the final assembly.
This part belongs to the APTGT series of IGBT modules, which utilize Trench Field Stop technology. The series includes various configurations such as single and dual units with different voltage ratings and packages like SP3 and SP6. The APTGT200DU60TG specifically addresses mid-power applications requiring 600 V blocking capability.
Consult official Microchip substitution guides for verified alternatives. Cross-reference specifications such as VCEO, IC, and package type when evaluating potential substitutes.