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Product Detailed Parameters
- Description：IGBT MODULE 1200V 300A 1050W D3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：6 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The APTGT200SK120D3G is a single IGBT module manufactured by Microchip Technology, formerly Microsemi. It utilizes silicon technology and features a D3-11 screw-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 300 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 1.05 kW. The module operates within a temperature range of -40°C to +125°C with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Single-channel configuration for high-power switching applications
- Robust thermal management via screw-mount baseplate design
- High-voltage capability suitable for industrial power conversion
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- Medium-voltage AC drive circuits
Procurement Notes
This component is classified as an End-of-Life (EOL) product. Verification of availability requires checking authorized distributors for remaining stock or surplus inventory. Buyers must confirm the specific revision status and ensure compliance with RoHS directives before procurement. Lead times are not applicable due to discontinuation status.
Selection Notes
Engineers should evaluate the 1.2 kV voltage rating and 300 A current capacity against system requirements. The D3-11 package necessitates compatible screw-mounting hardware and thermal interface materials. Designers must account for the 1.05 kW power dissipation limit and ensure adequate heatsinking to maintain junction temperatures within the specified operating range.
Part Context
The APTGT200SK120D3G belongs to the APTGT series of trench field-stop IGBT modules from Microsemi. This series was designed for high-efficiency power switching in demanding industrial environments. The module integrates a single IGBT die optimized for low conduction losses and robust short-circuit withstand capability.
Replacement Considerations
As this part is discontinued, engineers should consult official replacement notices or cross-reference with newer Microchip IGBT modules offering similar voltage and current ratings in compatible packages.
