APTGT20A60T1G

APTGT20A60T1G

$19.87
  • Description:IGBT MODULE 600V 32A 62W SP1
  • Series:-

SKU:48c63c3ee996 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 32A 62W SP1
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 20A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):32 A
  • Power - Max:62 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.1 nF @ 25 V

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APTGT20A60T1G

Overview

The APTGT20A60T1G is a 600V, 20A insulated gate bipolar transistor (IGBT) phase leg module utilizing Trench + Field Stop technology. It integrates an IGBT and a soft-recovery parallel diode in an isolated SP1 package with a built-in NTC thermistor. Key electrical parameters include a collector-emitter breakdown voltage of 600V, continuous collector current of 20A at 80°C case temperature, and maximum power dissipation of 62W at 25°C. The junction-to-case thermal resistance is 2.4°C/W for the IGBT and 3.25°C/W for the diode. The device supports an operating junction temperature range from -40°C to 175°C and features an RMS isolation voltage of 2500V.

Feature Summary

  • Trench + Field Stop IGBT technology providing low voltage drop and low tail current
  • Integrated internal NTC thermistor for precise temperature monitoring
  • Soft recovery parallel diodes with low forward voltage and leakage current
  • Symmetrical design ensuring very low stray inductance

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify component authenticity by checking the marking on the module casing against the official Microsemi datasheet specifications. Confirm the presence of the NTC thermistor and ensure the package type matches the SP1 outline dimensions. Request the specific revision level documentation to ensure alignment with the August 2007 release data. Inspect terminals for damage prior to installation.

Selection Notes

Select this module for applications requiring high-frequency operation up to 20 kHz with robust reverse bias safe operating area ratings. Ensure the thermal management system can maintain the case temperature within the specified limits to support the 20A continuous current rating. Verify that the gate drive circuitry provides the required ±15V swing and appropriate gate resistance for optimal switching performance.

Part Context

This component belongs to Microsemi's SP1 series of integrated power modules designed for compact, high-performance power electronics. The SP1 package allows direct mounting to heatsinks while maintaining electrical isolation. This specific part number represents a phase leg configuration combining an IGBT switch with an anti-parallel diode in a single flange-mount unit.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. When evaluating alternatives, verify that any replacement matches the 600V VCES rating, 20A IC rating at 80°C, SP1 package footprint, and pinout configuration. Ensure thermal resistance and isolation voltage specifications meet or exceed the original requirements.

APTGT20A60T1GAPTGT20A60T1G
$19.87
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