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The APTGT20H60T1G is a silicon-based IGBT module manufactured by Microchip Technology, housed in the SP1-12 package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 90 W. Operating within a temperature range of -40°C to +100°C, it utilizes screw mount installation and adheres to RoHS standards.
Verify the complete part number including suffixes against official Microchip Technology documentation to ensure correct configuration. Confirm package type and electrical ratings match design requirements before ordering. Check for any recent product change notifications or datasheet revisions that may affect compatibility or specifications.
Select this component when a 600 V full bridge IGBT module with 20 A continuous current capability is required. Ensure thermal management solutions support the 90 W power dissipation rating. Verify that the SP1-12 package dimensions and screw mount terminals fit the intended PCB or chassis layout constraints.
This module belongs to the Microchip Technology IGBT module family, specifically designed for medium-power applications. It shares the SP1-12 packaging format with other variants in the series, offering standardized mounting and electrical interfaces for system designers integrating multiple power stages.