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The APTGT225DU170G is a dual silicon IGBT module manufactured by Microchip Technology, housed in an SP6 screw-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 340 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 600 nA. Power dissipation capacity is rated at 1.25 kW, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and the unit weighs approximately 110 g.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status and check for specific datasheet revisions prior to integration. Ensure supply chain documentation matches the exact part number suffix to avoid functional discrepancies in high-power designs.
Select this module when system requirements demand 1.7 kV blocking capability with high continuous current handling. The SP6 package facilitates efficient heat sinking for high-power density designs. Evaluate thermal resistance parameters against heatsink capabilities to ensure operation within the specified temperature limits during peak load conditions.
This component belongs to the Microchip APTGT series of high-power IGBT modules. These devices are engineered for robust performance in demanding power electronics environments. The series utilizes advanced silicon technology to balance switching speed and conduction losses, supporting reliable operation in critical infrastructure applications.
Direct substitutes require matching 1.7 kV rating, dual configuration, and SP6 footprint. Verify equivalent current ratings and saturation voltages to maintain circuit performance without redesigning thermal interfaces.