SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT25A120T1G is a half-bridge IGBT power module utilizing Fast Trench + Field Stop technology. It features a 1200 V collector-emitter breakdown voltage and supports a continuous collector current of 40 A at 25°C, or 25 A at 80°C case temperature. The maximum power dissipation is 156 W at 25°C. The module includes an integrated NTC thermistor for thermal monitoring and operates within a junction temperature range of -40°C to 150°C. It provides an isolation voltage of 2500 V RMS between terminals and the case.
Verify component authenticity through authorized Microchip Technology distributors. Confirm package integrity and terminal condition upon receipt. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Cross-reference datasheet revisions to ensure compatibility with specific application requirements.
Select this module for applications requiring high-frequency operation up to 20 kHz. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance values. Consider the pulsed collector current rating for transient load conditions. Verify gate drive voltage compatibility with the ±20 V maximum rating.
This component belongs to the Microsemi SP1 series of isolated power modules. It integrates a single IGBT switch and one anti-parallel diode into a compact footprint designed for direct heatsink mounting. The series emphasizes high integration levels and robust performance in demanding power electronics environments.
No public confirmed substitute part numbers are available in the provided documentation.