APTGT25A120T1G

APTGT25A120T1G

$24.90
  • Description:IGBT MODULE 1200V 40A 156W SP1
  • Series:-

SKU:9b43e58a7d3e Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 40A 156W SP1
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 25A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):40 A
  • Power - Max:156 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.8 nF @ 25 V

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APTGT25A120T1G

Overview

The APTGT25A120T1G is a half-bridge IGBT power module utilizing Fast Trench + Field Stop technology. It features a 1200 V collector-emitter breakdown voltage and supports a continuous collector current of 40 A at 25°C, or 25 A at 80°C case temperature. The maximum power dissipation is 156 W at 25°C. The module includes an integrated NTC thermistor for thermal monitoring and operates within a junction temperature range of -40°C to 150°C. It provides an isolation voltage of 2500 V RMS between terminals and the case.

Feature Summary

  • Fast Trench + Field Stop IGBT technology with low voltage drop and soft recovery parallel diodes
  • Internal NTC thermistor for precise temperature monitoring
  • Symmetrical design ensuring very low stray inductance
  • Solderable terminals for both power and signal connections

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors. Confirm package integrity and terminal condition upon receipt. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Cross-reference datasheet revisions to ensure compatibility with specific application requirements.

Selection Notes

Select this module for applications requiring high-frequency operation up to 20 kHz. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance values. Consider the pulsed collector current rating for transient load conditions. Verify gate drive voltage compatibility with the ±20 V maximum rating.

Part Context

This component belongs to the Microsemi SP1 series of isolated power modules. It integrates a single IGBT switch and one anti-parallel diode into a compact footprint designed for direct heatsink mounting. The series emphasizes high integration levels and robust performance in demanding power electronics environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

APTGT25A120T1GAPTGT25A120T1G
$24.90
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