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The APTGT300A120G is a dual IGBT module manufactured by Microchip Technology, designed for high-power applications. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 420 A at 25°C. The saturation voltage (Vce(sat)) is specified at 1.7 V, with a power dissipation (Pd) of 1.38 kW. The device utilizes silicon technology and operates within a temperature range of -40°C to +100°C. It is housed in an SP6 package with screw mount installation style and has a maximum gate-emitter voltage of 20 V.
Verify the specific revision level and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure that the ordering suffix matches the required packaging and terminal configuration. Confirm lead times as production cycles may vary based on current demand and manufacturing schedules.
Select this component when a dual IGBT configuration is required for high-voltage switching applications. Ensure the cooling system can handle the 1.38 kW power dissipation at the expected operating temperature. Verify that the gate drive circuitry supports the 20 V maximum gate-emitter voltage limit to prevent device damage.
This module belongs to the PM-IGBT-TFS-SP6C product family from Microchip Technology. It shares the SP6 mechanical footprint with other variants in the series, such as the APTGT300SK120G and APTGT300A170G, allowing for potential mechanical compatibility in designs requiring different electrical ratings within the same package type.
Direct replacements include APTGT300SK120G (single configuration, same voltage/current) and APTGT300A170G (dual, higher voltage). Verify electrical parameters and mounting hole patterns before substitution.