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The BSM100GB170DLCHOSA1 is a dual IGBT silicon module manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 200 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.6 V and a gate-emitter leakage current of 200 nA. Power dissipation is rated at 960 W, with an operating temperature range from -40°C to +125°C. The module utilizes screw mount installation within a 62 mm package.
This component is officially listed as End-of-Life (EOL). Verification of availability requires checking authorized distributors or secondary market suppliers. Confirm the specific HOSA1 suffix against official discontinuation notifications to ensure compatibility with existing designs before procurement attempts.
Select this module for high-voltage applications requiring dual IGBT functionality. Verify that the 1.7 kV rating and 200 A current capacity align with system requirements. Ensure the screw mount package style fits the mechanical design constraints and that the thermal management solution supports the 960 W dissipation rating.
The BSM100GB170DLC series represents Infineon's standard dual IGBT modules in the GB family. The HOSA1 suffix indicates a specific manufacturing batch or traceability code associated with the base BSM100GB170DLC part number. This series is designed for general-purpose industrial power electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Infineon application notes for migration paths from discontinued IGBT modules.