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The APTGT300A170G is a single-chip silicon IGBT power module manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 400 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 600 nA. Maximum power dissipation is rated at 1.66 kW, with an operating temperature range from -40°C to +100°C. The unit utilizes screw mount installation within an SP6 package and supports a maximum gate-emitter voltage of 20 V.
Verify the specific revision status and manufacturing date code against the latest official datasheet before procurement. Confirm that the SP6 package dimensions match the mechanical constraints of the target heatsink assembly. Ensure that the gate drive circuitry adheres to the specified 20 V maximum rating to prevent device degradation or failure during operation.
Select this component when a single IGBT configuration is required for circuits operating up to 1.7 kV. The 400 A current rating suits applications needing moderate to high power handling within a compact footprint. Consider the 100°C maximum junction temperature limit when designing thermal management solutions for continuous duty cycles.
This module belongs to the APTGT series of high-speed IGBT modules designed for efficiency and reliability. It represents a discrete power switching solution distinct from integrated intelligent power modules. The SP6 packaging provides a standardized form factor compatible with various industrial power electronics platforms.
Direct replacements include other Microchip APTGT series modules with identical voltage and current ratings, such as the APTGT300DA170G or APTGT300SK170G, provided the pinout and mechanical specifications remain compatible with the existing board layout.