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The APTGT300DH60G is a dual IGBT module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 430 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.4 V and a gate-emitter leakage current of 500 nA. Maximum power dissipation is rated at 1.15 kW, with an operating temperature range from -40°C to +100°C. The module is housed in an SP6 screw-mount package and has a unit weight of 110 g.
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6 package dimensions match the target PCB or heatsink design requirements. Ensure that the gate drive circuitry supports the specified 20 V maximum gate-emitter voltage limits to prevent device damage during operation.
Select this component when a dual IGBT configuration is required within the 600 V voltage class. The 430 A continuous current rating suits high-power industrial applications. Compare the 1.4 V saturation voltage against alternative modules to evaluate conduction losses. Verify that the SP6 package compatibility aligns with existing thermal management infrastructure and mounting constraints.
This part belongs to the APTGT series of high-speed IGBT4 power modules designed for demanding power conversion tasks. The series emphasizes low voltage drop and reduced switching losses. The APTGT300DH60G specifically addresses applications requiring robust dual-switching capabilities within a compact SP6 footprint, distinguishing it from single or three-phase variants in the lineup.
The APTGT300DU60G shares identical electrical specifications and the SP6 package but differs in internal configuration details. Evaluate the specific pinout and internal diode arrangements of both parts to ensure functional equivalence in the target circuit design before substitution.