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The APTGT300SK120D3G is a single IGBT power module manufactured by Microchip Technology, formerly Microsemi. It features a D3-11 package and screw mount installation style. The device supports a collector-emitter maximum voltage (VCEO) of 1.2 kV with a continuous collector current of 440 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, gate-emitter leakage current of 400 nA, and maximum power dissipation of 1.45 kW. The operating temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
This component is classified as an End-of-Life product. Verification of availability requires checking authorized distributors for remaining stock or surplus inventory. Engineering samples may be unavailable. Confirm final assembly site and labeling changes via official Product Change Notices before procurement decisions.
Select this module for applications requiring 1.2 kV blocking voltage and high current handling up to 440 A. Ensure the cooling system accommodates the 1.45 kW power dissipation limit. Verify that the drive circuit provides the required 20 V gate-emitter voltage swing. Consider the D3-11 footprint constraints during PCB or chassis design.
The APTGT300SK120D3G belongs to the APTGT series of trench field-stop IGBT modules. This series integrates fast recovery anti-parallel diodes. The part represents a legacy offering from Microsemi's power discrete portfolio, now managed under Microchip Technology following corporate acquisition.
Verify pinout compatibility when substituting. Check datasheets for equivalent voltage and current ratings. Confirm thermal resistance values match the existing heatsink design. Review switching characteristics to ensure driver circuit compatibility.