ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1700V 45A 210W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：45 A
- Power - Max：210 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.5 nF @ 25 V
Download product information
Overview
The APTGT30A170T1G is a dual IGBT power module manufactured by Microchip Technology, designed for high-voltage applications. It features a maximum collector-emitter voltage (VCEO) of 1700 V and a continuous collector current of 30 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 3.4 V. Power dissipation is rated at 180 W. The module operates within a junction temperature range of -40°C to +175°C and utilizes the SP1-12 package format with screw mount installation.
Feature Summary
- Dual configuration suitable for half-bridge topologies
- High voltage capability up to 1700 V
- Extended operating junction temperature range
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm mechanical dimensions against the target PCB or busbar design. Ensure thermal interface material compatibility with the SP1-12 package baseplate. Check for any recent product change notices affecting electrical parameters or pinout definitions before finalizing procurement.
Selection Notes
Select this component for circuits requiring 1700 V blocking capability with moderate current levels around 30 A. Evaluate the 3.4 V saturation voltage impact on conduction losses relative to system efficiency targets. Consider the 180 W power dissipation rating alongside heatsinking capabilities. Verify that the gate drive requirements align with the specified maximum gate-emitter voltage limits.
Part Context
This part belongs to the Microchip APTGT series of trench field-stop IGBT modules. These modules are engineered for robust performance in medium-power conversion applications. The series offers various configurations including half-bridge and full-bridge options across different voltage ratings. The APTGT30A170T1G specifically addresses needs for higher voltage isolation in compact industrial formats.
Replacement Considerations
Direct replacements must match the 1700 V rating, 30 A current capacity, and SP1-12 package footprint. Cross-reference with other Microchip APTGT variants or competitor modules offering identical pinouts and thermal characteristics. Validate switching speed and safe operating area curves to ensure circuit stability during replacement.
