SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT30H60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 300 nA. Power dissipation is rated at 90 W, with an operating temperature range from -40°C to +100°C. The maximum gate-emitter voltage is 20 V.
Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before procurement. Cross-reference the part number with authorized distributors to validate authenticity and traceability.
Select this module for applications requiring a 600 V rating and 50 A continuous current capability. Ensure the thermal management system can handle the 90 W power dissipation within the specified temperature limits. Verify that the drive circuitry supports the required gate-emitter voltage specifications for proper switching operation.
This component belongs to the Microchip PM-IGBT-TFS-SP1 series of IGBT modules. It shares the SP1-12 package form factor with other variants in the family, such as the APTGT20H60T1G and APTGT50H60T1G, which differ primarily in current ratings while maintaining similar voltage characteristics.
Direct substitutes include APTGT20H60T1G for lower current requirements and APTGT50H60T1G for higher current needs, provided the pinout and thermal interface remain compatible.