APTGT30H60T1G

APTGT30H60T1G

$41.19
  • Description:IGBT MODULE 600V 50A 90W SP1
  • Series:-

SKU:ee29231a8b03 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 50A 90W SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:90 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.6 nF @ 25 V

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APTGT30H60T1G

Overview

The APTGT30H60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 300 nA. Power dissipation is rated at 90 W, with an operating temperature range from -40°C to +100°C. The maximum gate-emitter voltage is 20 V.

Feature Summary

  • Full bridge topology for single-phase power conversion applications
  • Screw mount installation style for secure mechanical attachment
  • Silicon-based semiconductor technology for robust performance

Applications

  • Single-phase AC motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before procurement. Cross-reference the part number with authorized distributors to validate authenticity and traceability.

Selection Notes

Select this module for applications requiring a 600 V rating and 50 A continuous current capability. Ensure the thermal management system can handle the 90 W power dissipation within the specified temperature limits. Verify that the drive circuitry supports the required gate-emitter voltage specifications for proper switching operation.

Part Context

This component belongs to the Microchip PM-IGBT-TFS-SP1 series of IGBT modules. It shares the SP1-12 package form factor with other variants in the family, such as the APTGT20H60T1G and APTGT50H60T1G, which differ primarily in current ratings while maintaining similar voltage characteristics.

Replacement Considerations

Direct substitutes include APTGT20H60T1G for lower current requirements and APTGT50H60T1G for higher current needs, provided the pinout and thermal interface remain compatible.

APTGT30H60T1GAPTGT30H60T1G
$41.19
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